Display device

ABSTRACT

A display device includes a first electrode, a second electrode adjacent to the first electrode, a barrier wall between the first electrode and the second electrode; a wiring arranged above the barrier wall, and arranged between the first electrode and the second electrode, an organic layer covering the first electrode, the second electrode, the barrier wall and the wiring, and a third electrode covering the organic layer, wherein a width of the wiring is narrower than a length between the first electrode and the second electrode, and a resistance value between the wiring and the third electrode is higher than a resistance value between the first electrode and the third electrode.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is based upon and claims the benefit of priority fromthe prior Japanese Patent Application No. 2017-095269, filed on May 12,2017, the entire contents of which are incorporated herein by reference.

FIELD

One embodiment of the present invention is related to a structure of aregion arranged with a pixel in a display device.

BACKGROUND

An organic electroluminescence (EL) display device (referred to hereinas an EL display device) has a plurality of pixels formed on asubstrate. In addition, each of the plurality of pixels includes aplurality of transistors, a capacitor element, and an organic lightemitting element (referred to herein as a light emitting element). Thelight emitting element is formed from, for example, an anode, a cathodeand an EL layer. For example, carriers (electrons, holes) are injectedinto the EL layer from the anode and the cathode due to a potentialdifference applied to the anode and the cathode, and carrierrecombination occurs in the EL layer. Then, the organic compoundincluded in the EL layer is in an excited state. Furthermore, energy isreleased when this excited state relaxes to a ground state, whereby thelight emitting element emits light. Each pixel is driven by a signalcontrolling a pixel. By controlling the driving of the transistorincluded in each pixel by this signal, the current supplied to the lightemitting element is controlled. Then, the EL display device can displayimages. In recent years, there has been increasing demand for displayingimages finely on display devices. That is, the demand for higherdefinition of EL display devices is increasing. When a display devicebecomes high definition, the amount of data of the image also increasesand power consumption increases. Therefore, in an EL display device,there is also a high demand for low power consumption.

As the definition of the EL display device becomes higher, the distancebetween pixels becomes closer. Therefore, the influence of a leakcurrent (also referred to herein as “lateral leak current”) flowingbetween adjacent pixels becomes significant. In addition, in order toreduce the power consumption of an EL display device, it is possible toreduce the difference between the voltages applied between the anode andthe cathode by using a material having a high conductivity for the ELlayer. However, since a material with high conductivity has highmobility, the lateral leak current is also large. In the EL displaydevice, the lateral leak current causes adjacent pixels to emit light,and there is a possibility of reducing color purity. For example,Japanese Laid Open Patent Publication No. 2016-85913 discloses an ELdisplay device in which a lateral leak current is reduced.

SUMMARY

One embodiment of the present invention is a display device including afirst electrode, a second electrode adjacent to the first electrode, abarrier wall between the first electrode and the second electrode; awiring arranged above the barrier wall and arranged between the firstelectrode and the second electrode, an organic layer covering the firstelectrode, the second electrode, the barrier wall and the wiring, and athird electrode covering the organic layer, wherein a width of thewiring is narrower than a length between the first electrode and thesecond electrode, and a resistance value between the wiring and thethird electrode is higher than a resistance value between the firstelectrode and the third electrode.

One embodiment of the present invention is a display device including afirst electrode layer including a plurality of first electrodes arrangedin a first direction and a second direction intersecting the firstdirection, a second electrode layer, a plurality of light emittinglayers arranged in the first direction and a second directionintersecting the first direction, an organic layer, a wiring layerincluding a plurality of wirings extending in the first direction andthe second direction, and a barrier wall, wherein the plurality ofwirings is in contact with a top of the barrier wall, the organic layeris arranged between the wiring layer and the second electrode layer, thelight emitting layer is arranged between the wiring and wiring adjacentto the wiring, each of the plurality of wrings are electricallyconnected to each other at two or more regions, and the two or moreregions are mutually and electrically separated from each other.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a schematic planar view diagram of a display device related toone embodiment of the present invention;

FIG. 2 is a schematic planar view diagram showing a pixel and wiring ofa display device related to one embodiment of the present invention;

FIG. 3 is a schematic cross-sectional diagram showing the structure of apixel included in a display device related to one embodiment of thepresent invention;

FIG. 4 is a schematic cross-sectional diagram showing the structure of apixel included in a display device related to one embodiment of thepresent invention;

FIG. 5 is a schematic cross-sectional diagram showing the structure of apixel included in a display device related to one embodiment of thepresent invention;

FIG. 6 is a schematic planar view diagram showing a circuit structure ofa display device related to one embodiment of the present invention;

FIG. 7 is a schematic planar view diagram showing a pixel structure of adisplay device related to one embodiment of the present invention;

FIG. 8 is a schematic diagram showing a pixel and wiring of a displaydevice related to one embodiment of the present invention;

FIG. 9 is a schematic diagram showing a pixel and wiring of a displaydevice related to one embodiment of the present invention;

FIG. 10 is a schematic diagram showing a pixel and wiring of a displaydevice related to one embodiment of the present invention;

FIG. 11 is a schematic diagram showing a pixel and wiring of a displaydevice related to one embodiment of the present invention;

FIG. 12 is a schematic diagram showing a pixel and wiring of a displaydevice related to one embodiment of the present invention;

FIG. 13 is a schematic diagram showing a pixel and wiring of a displaydevice related to one embodiment of the present invention;

FIG. 14 is a schematic diagram showing a pixel and wiring of a displaydevice related to one embodiment of the present invention;

FIG. 15 is a schematic planar view diagram of a display device relatedto one embodiment of the present invention;

FIG. 16 is a schematic planar view diagram of a display device relatedto one embodiment of the present invention;

FIG. 17 is a schematic diagram showing a pixel and wiring of a displaydevice related to one embodiment of the present invention;

FIG. 18 is a schematic cross-sectional diagram of a display devicerelated to one embodiment of the present invention;

FIG. 19A is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention;

FIG. 19B is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention;

FIG. 20A is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention;

FIG. 20B is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention;

FIG. 21A is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention;

FIG. 21B is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention;

FIG. 22A is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention;

FIG. 22B is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention; and

FIG. 23 is a schematic cross-sectional diagram for explaining amanufacturing method of a display device related to one embodiment ofthe present invention.

DESCRIPTION OF EMBODIMENTS

Embodiments of the present invention are explained below while referringto the drawings and the like. However, the present invention can beperformed in many different modes and is not to be interpreted as beinglimited to the description of the embodiments exemplified below. Inaddition, in order to make the explanation clearer, the drawings may beschematically represented in terms of the width, thickness and shape andthe like of each part compared with their actual forms, and are only anexample, and therefore an interpretation of the present invention is notlimited. Furthermore, in this specification and each drawing, elementssimilar to those described previously with reference to the previousdrawings are denoted by the same reference numerals (or referencenumerals with a, b, etc. followed by a numeral) and a detailedexplanation may be omitted as appropriate. Furthermore, letters addedwith “first” and “second” to each element are convenience symbols usedto distinguish each element and do not have any other meaning unlessotherwise specified.

In the present specification, when a certain member or region isreferred to as “above (or below)” another member or region, unless thereis any special limitation, this includes not only being directly above(or directly below) another member or region but also above (or below)another member or area, that is, the case where another component isincluded between the upper (or lower) the other member or area. In thefollowing explanation, unless otherwise specified, the side on whicheach layer of an insulating layer, a semiconductor layer and aconductive layer, or each element such as a transistor and a lightemitting element are arranged with respect to the substrate is referredto as “upper” or “above”, and the opposite side is referred to as“lower” or “below”.

The first substrate explained in the present specification has at leasta planar shaped main surface, and each layer of the insulating layer,the semiconductor layer and the conductive layer, or each element suchas the transistor and the light emitting element are arranged on thisone main surface. In the following explanation, in the case where anexplanation is made on the basis of “upper”, “upper layer”, “below” or“upper surface” with respect to the first substrate with one mainsurface of the substrate as a reference in a cross-sectional view,unless otherwise specified, it is explained with reference to the onemain surface of the substrate.

The EL display device described in Japanese Laid Open Patent PublicationNo. 2016-85913 requires a bias circuit in order to suppress lateralleakage. When an image is displayed by the EL display device, since itis necessary to operate the bias circuit, there is concern that thepower consumption of the EL display device increases.

In view of such a problem, one embodiment of the present invention is toprovide a display device which suppresses a lateral leak current.Another object of one embodiment of the present invention is to providea display device with low power consumption.

<First Embodiment>

The structure of a display device according to one embodiment of thepresent invention is explained.

FIG. 1 is a schematic planar diagram of a display device (referred to asa display device herein) 100 according to one embodiment of the presentinvention.

FIG. 2 is a schematic planar diagram of a pixel and wiring included inthe display device 100. In addition, FIG. 2 is an enlarged view of theregion B in FIG. 1.

FIG. 3 and FIG. 4 are schematic cross-sectional diagrams showing astructure of a pixel included in the display device 100 and areschematic cross-sectional views along the lines A1 and A2 shown in FIG.1 and FIG. 2.

The display device 100 includes a first electrode 162 and a firstelectrode adjacent to the first electrode 162. In addition, the displaydevice 100 includes a partition wall 168 arranged between the firstelectrode 162 and the adjacent first electrode. Furthermore, the displaydevice 100 includes wiring 207 arranged on the partition wall 168, and afirst electrode 162. Furthermore, the display device 100 includes afirst electrode adjacent to the first electrode 162, and an organiclayer 300 covering the partition wall 168 and the wiring 207. Here, theorganic layer 300 is arranged between the wiring 207 and the secondelectrode layer 166. The width of the wiring 207 is narrower than thelength between the first electrode 162 and the first electrode adjacentto the first electrode 162. In addition, by applying a voltage to eachof the wiring 207 and the second electrode layer 166 and providing apotential difference, it is possible to increase a resistance valuebetween the wiring 207 and the second electrode layer 166. Furthermore,the organic layer 300 has at least one continuously spread layer betweenadjacent pixel electrodes. In addition, at least one continuously spreadlayer has conductivity for transporting carriers such as holes andelectrons. For example, the organic layer 300 may be formed from atleast one of an electron transport layer 174 and a hole transport layer170. In addition, a light emitting layer 176 is included between thefirst electrode 162 and the second electrode layer 166. When a voltageis applied to each of the first electrode 162 and the second electrodelayer 166 to provide a potential difference, electrons are injected fromthe electron transporting layer 174 into the light emitting layer 176.When a voltage is applied to each of the first electrode 162 and thesecond electrode layer 166 to provide a potential difference, holes areinjected from the hole transporting layer 170 into the light emittinglayer 176. Therefore, since a current flows between the first electrode162 and the second electrode layer 166, it is possible to reduce theresistance value between the first electrode 162 and the secondelectrode layer 166. Therefore, the resistance value between the wiring207 and the second electrode layer 166 is higher than the resistancevalue between the first electrode 162 and the second electrode layer166. Furthermore, it is preferred that a potential difference (V1) of avoltage applied to each of the wiring 207 and the second electrode layer166 is higher than a potential difference (V2) of a voltage applied toeach of the first electrode 162 and the second electrode layer 166.Here, the first electrode 162 is a pixel electrode. In addition, thefirst electrode adjacent to the first electrode 162 is also a pixelelectrode.

The display device 100 includes a first electrode layer having aplurality of first electrodes 162, a second electrode layer 166, aplurality of light emitting layers 176 arranged in a first direction anda second direction intersecting the first direction, an organic layer300, a wiring layer having a plurality of wirings 207 extending in afirst direction and a second direction intersecting the first direction,and a partition wall 168. In addition, in the display device 100, thewiring 207 is arranged to be in contact with the partition wall 168. Anorganic layer 300 is arranged between the wiring 207 and the secondelectrode layer 166. The plurality of wirings 207 are electricallyconnected.

In addition, it can be said that increasing the resistance value betweenthe wiring 207 and the second electrode layer 166 means increasing theinsulating properties of the organic layer 300 including the electrontransporting layer 174 and the hole transporting layer 170 arrangedbetween the wiring 207 and the second electrode layer 166. In oneembodiment of the present invention, it may also be said that increasingthe resistance value is deteriorating. In addition, in one embodiment ofthe present invention, it may also be said that increasing insulationproperties means deteriorating. For example, when it is desired to flowthe same current as before the organic layer 300 deteriorates to theorganic layer 300 after the organic layer 300 has deteriorated, thevoltage applied to the organic layer 300 after degradation must behigher than the voltage applied to the organic layer 300 beforedegradation. In other words, it can be said that deterioration of theorganic layer 300 means it has a large resistance value.

By providing the display device 100 according to one embodiment of thepresent invention with the structure described above, it is possible toincrease the resistance value between the wiring 207 and the secondelectrode layer 166. Therefore, in the display device 100 according toone embodiment of the present invention, even if one subpixel is made toemit light, it is possible to prevent a hole excited from the holetransport layer 170 in this subpixel reaching an end part of a subpixeladjacent to this subpixel. That is, the display device 100 according toone embodiment of the present invention is a display device which cansuppress lateral leakage current. In addition, in the display device 100according to one embodiment of the present invention, it is possible toprevent pixels other than pixels which should emit light fromunexpectedly emitting light. Therefore, by using the display deviceaccording to one embodiment of the present invention, it is possible toprevent color mixing. Therefore, by adopting the structure describedabove, it is possible to provide a display device which can display aclear image without reducing the color purity of the display device.

As is shown in FIG. 1, the display device 100 includes a substrate 104,a display region 102, wiring 207, a second electrode layer 166 and apixel 120. The display region 102, the wiring 207, the second electrodelayer 166 and the pixel 120 are arranged over the substrate 104. Aplurality of pixels 120 are arranged in the display region 102. Thepixel 120 has a subpixel 130, a subpixel 132 and a subpixel 134. Ascanning line driving circuit 126 and an IC chip 124 for controllingdriving of the pixel 120 are arranged outside the display region 102.Here, although an example is shown in which the scanning line drivingcircuit 126 and the IC chip 124 are arranged on the substrate 104, thepresent invention is not limited to this example. For example, a drivingcircuit formed on a substrate (a semiconductor substrate or the like)different from the substrate 104 may also be arranged on a connector 214such as the substrate 104 or a flexible printed circuit (FPC) substrate.A part or the whole of the circuit included in the scanning line drivingcircuit 126 and the IC chip 124 may be formed on a substrate differentfrom the substrate 104 and the substrate different from the substrate104 may be arranged on the substrate 104 or the connector 214. Inaddition, the driving circuit included in the IC chip 124 or a part ofthe drive circuit may be formed directly on the substrate 104.Furthermore, although not shown here, display elements such as lightemitting elements arranged in the pixels 120 and various semiconductorelements for controlling them are formed on the substrate 104. In orderto promote understanding, the wiring 207 is shown by a solid line inFIG. 1, and the wiring 207 has a finite width as shown in FIG. 2.

In addition, the display device 100 includes first wiring 206, a contacthole 208, first terminal wiring 210, a first terminal 212, second wiring216, a contact hole 218, second terminal wiring 220, a second terminal222 and a third terminal 122. These are also arranged on the substrate104 similar to the scanning line driving circuit 126.

In addition, in the display device 100, the wiring 207 extends in afirst direction and a second direction intersecting the first directionand is electrically connected. In addition, the wiring 207 is arrangedbetween a light emitting layer 176 included in a subpixel and a lightemitting layer 176 of an adjacent subpixel. Furthermore, the wiring 207is electrically connected to the first wiring 206 which extends fromoutside of the display region 102. The first wiring 206 extends outsidethe display region 102 and is electrically connected to the firstterminal wiring 210 via the contact hole 208. The first terminal wiring210 is exposed in the vicinity of the end part of the display device 100and forms the first terminal 212. The first terminal 212 is connected tothe connector 214. A voltage applied to the wiring 207 is provided tothe wiring 207 from an external circuit (not shown in the drawing) viathe first terminal 212.

Similarly, the second electrode layer 166 is electrically connected tothe second wiring 216 extending from outside of the display region 102.The second wiring 216 extends through the outside the display region 102and is electrically connected to the second terminal wiring 220 via thecontact hole 218. The second terminal wiring 220 is exposed near thevicinity of the display device 100 and forms the second terminal 222.The second terminal 222 is connected to the connector 214. The voltageapplied to the second electrode layer 166 is provided to the secondelectrode layer 166 from an external circuit via the second terminal222.

Furthermore, supply of a signal to the pixels 120 in the display region102 is performed from an external circuit (not shown in the drawing) viathe third terminal 122, the scanning line driving circuit 126 and the ICchip 124. The first terminal 212, the second terminal 222 and the thirdterminal 122 can be formed to be aligned along one side of the displaydevice 100. As a result, it is possible to supply a voltage and signalsto the display region 102, the wiring 207 and the second electrode layer166 using one single connector 214.

Furthermore, in FIG. 1, an example of the pixel 120 having a stripearrangement is shown. In FIG. 1, an example is shown in which one pixel120 is formed by three subpixels, namely a subpixel 130, subpixel 132and a subpixel 134. Each subpixel is arranged with one display elementsuch as a light emitting element. The color corresponding to a subpixelis determined by the characteristics of a light emitting element or acolor filter arranged on a subpixel. In the present specification andthe claims, the pixel 120 refers to a pixel having one light emittingelement and a plurality of subpixels providing at least one differentcolor. The pixel 120 is the smallest unit which forms a part of an imagereproduced in the display region 102. A subpixel included in the displayregion 102 is included in one of the pixels 120.

In addition, in a stripe arrangement, three subpixels 130, subpixel 132and subpixel 134 are formed to emit different colors. For example, eachof the subpixel 130, the subpixel 132 and the subpixel 134 may bearranged with a light emitting layer that emits light of three primarycolors of red, green, and blue. Next, a full color display device can beprovided by supplying 256 levels of a voltage or current to each of thethree subpixels. In the case when the light emitting layers emitdifferent colors, the wirings 207 arranged between the light emittinglayers are electrically connected to each other. Furthermore, in thecase when the light emitting layers of adjacent subpixels emit the samecolor, the wiring 207 arranged between the light emitting layers may notbe electrically connected. By electrically connecting the wirings 207 toeach other, it is possible to uniformly apply a voltage to each of thesecond electrode layer 166 and the wiring 207 and thereby provide apotential difference. Therefore, it is possible to uniformly increasethe resistance of the electron transport layer 174 and the holetransport layer 170 arranged between the wiring 207 and the secondelectrode layer 166.

FIG. 2 is an enlarged view of the region B shown in FIG. 1. Furthermore,the second electrode layer 166, the electron transport layer 174, andthe hole transport layer 170 are arranged over the entire surface.

As is shown in FIG. 3, in the subpixel 130, the first electrode 162 andthe partition wall 168 are arranged on the inorganic insulating film150. In addition, a hole transport layer 170, a light emitting layer176, an electron transport layer 174, a second electrode layer 166, alayer (first inorganic film) 182, a layer (second inorganic film) 186, alayer (organic film) 184, an organic insulating film 190 and a coverfilm 268 are arranged on the first electrode 162. The light emittinglayer 176 is formed from a light emitting layer 176R, a light emittinglayer 176G and a light emitting layer 176B. The hole transporting layer170, the electron transporting layer 174 and the second electrode layer166 arranged over the wiring 207 are continuously spread to each other.Furthermore, a wiring 207 is arranged on the partition wall 168. Inaddition, the partition wall 168 and the wiring 207 are in contact witheach other. The subpixel 132 and the subpixel 134 are also similar tothe subpixel 130. Furthermore, FIG. 3 shows an example in which thecover film 268 is arranged on the organic insulating film 190. However,the cover film 268 is not necessary. Furthermore, FIG. 3 shows a crosssection of the structure above the inorganic insulating film 150 and thefirst electrode 162 in order to promote understanding.

In addition, each of the light emitting layer 176R, the light emittinglayer 176G and the light emitting layer 176B is arranged between thewiring 207 and adjacent wiring 207. Furthermore, as described above, thewiring 207 extends in a first direction and a second directionintersecting the first direction and is electrically connected. Byarranging the light emitting layer 176R, the light emitting layer 176G,the light emitting layer 176B, and the wiring 207 independently fromeach other, even when a voltage is applied to each of the wiring 207 andthe second electrode layer 166 to provide a potential difference, thereis no short circuit between each of the light emitting layer 176R, thelight emitting layer 176G, the light emitting layer 176B and the wiring207. In addition, since the light emitting layer 176R, the lightemitting layer 176G, the light emitting layer 176B and the wiring 207are arranged independently of each other, it is possible to increase theresistance of the electron transporting layer 174 and the hole transportlayer 170.

In addition, it can be understood that the width of a part where thewiring 207 contacts the partition wall 168 is narrower than the width ofthe partition wall 168 which contacts the wiring 207. In other words,the width of the bottom part of the wiring 207 is narrower than thewidth of the upper part of the partition wall 168. In this way, it ispossible to arrange the wiring 207 to reliably contact the partitionwall 168. In addition, since the wiring 207 is arranged on the partitionwall 168, the distance between the wiring 207 and the second electrodelayer 166 can be reduced. The structure in which the distance betweenthe wiring 207 and the second electrode layer 166 is short is astructure in which the electron transporting layer 174 and the holetransporting layer 170 are easily formed having a high resistance.

FIG. 4 schematically shows a state in which the electron transport layer174 and the hole transport layer 170 are in a high resistance stateafter applying a potential difference between the wiring 207 and thesecond electrode layer 166 in FIG. 3. For example, in FIG. 4, a regionin a high resistance state is shown by the high resistance region 350.The high resistance region 350 is a region in which a part of thecontinuously spread layer between adjacent first electrodes 162 (pixelelectrodes) has high resistance (deteriorated). The high resistancestate can also be said to be a deteriorated state. Furthermore, FIG. 4also shows a cross section of the structure above the inorganicinsulating film 150 and the first electrode 162 in order to promoteunderstanding. In addition, in the high resistance region 350, theentire high resistance region 350 may be in a high resistance state, orthe resistance may gradually increase from the outline part to thecenter part of the high resistance region 350.

In addition, the wiring 207 is independently arranged between the lightemitting layer 176R of the subpixel 130 and the light emitting layer176G of an adjacent subpixel 132. In FIG. 3 an example is shown in whichthe wiring 207 includes a gap between the light emitting layer 176R andthe light emitting layer 176G respectively. In addition, at least one ofthe electron transporting layer 174 and the hole transporting layer 170is arranged in this gap. The width of the bottom part of the wiring 207is narrower than the width of the upper part of the partition wall 168.Furthermore, the width of the upper part of the partition wall 168 islarger than the distance between the wiring 207 and an adjacent lightemitting layer 176G of the subpixel 132. In this way, when a voltage isapplied to the second electrode layer 166 and the wiring 207, it ispossible to reliably separate the second electrode layer 166, the lightemitting layer 176R adjacent to the wiring 207, and the light emittinglayer 176B by providing the high resistance region 350 between them.That is the high resistance region 350 is formed between the secondelectrode layer 166 and the wiring 207, and it is possible to suppress alateral leakage current between adjacent subpixels. Furthermore, the endparts of the light emitting layer 176R, the light emitting layer 176Gand the light emitting layer 176B may be covered by the wiring 207. Whena potential difference is provided by applying a voltage to each of thewiring 207 and the second electrode layer 166 by covering the respectiveends of the light emitting layer 176R, the light emitting layer 176G andthe light emitting layer 176B with the wiring 207, the end parts of thelight emitting layer 176R, the light emitting layer 176G and the lightemitting layer 176B which are covered by the wiring 207 also become apart of the high resistance region 350. Therefore, it is possible tosuppress a lateral leakage current between adjacent subpixels. Inaddition, it is possible to prevent adjacent pixels from emitting light.

In addition, the subpixel 130 includes a light emitting layer 176Rcorresponding to red and a first electrode 162. The subpixel 132includes a light emitting layer 176G corresponding to green and a firstelectrode 162. The subpixel 134 includes a light emitting layer 176Bcorresponding to blue and a first electrode 162. First electrodes 162adjacent to each other are separated by a partition wall 168.Furthermore, the first electrodes 162 adjacent to each other and thewiring 207 are separated by the partition wall 168. In this way, thereis no short circuit between pairs of first electrodes 162 and the wiring207, and it is possible to suppress a lateral leakage current betweenadjacent subpixels.

Furthermore, applying a voltage to each of the wiring 207 and the secondelectrode layer 166 may be performed at any stage as long as it isperformed after arranging the wiring 207 and the second electrode layer166. For example, it may be immediately after the manufacture of thedisplay device 100 is completed, or just before the display device 100is shipped. In addition, the voltage applied to the wiring 207 ispreferred to be high compared to the voltage applied to the secondelectrode layer 166.

FIG. 5 is an enlarged view of the region C shown in FIG. 4. The highresistance region 350 may be present not only on the upper surface ofthe wiring 207 but also on the side surface or side wall of the wiring207 and a region in contact with the partition wall 168. As an example,the electron transport layer 174 arranged between the wiring 207 and thesecond electrode layer 166, the hole transport layer 170, the uppersurface of the wiring 207, and a surface of the second electrode layer166 arranged above the wiring 207 are ideal planes and in the case whereeach is parallel to each other, the high resistance region 350 becomes aregion between the upper surface of the wiring 207 and the secondelectrode layer 166 arranged above the wiring 207. In addition, it ispossible to illustrate the case where the resistance value of the highresistance region 350 is given as R, the area of a part where the uppersurface of the wiring 207 and the surface of the second electrode layer166 arranged above the wiring 207 overlap is S, the thickness of theelectron transport layer 174 is H1, the resistance ratio of the electrontransport layer 174 is r1, the thickness of the hole transport layer 170is H2, and the resistance ratio of the hole transport layer 170 is r2 inthe formula (1)

$\begin{matrix}{R = {{r\; 1 \times \frac{H\; 1}{S}} + {r\; 2 \times \frac{H\; 2}{S}}}} & (1)\end{matrix}$

Although an example is shown in one embodiment of the present inventionin which the organic layer 300 between the wiring 207 and the secondelectrode layer 166 is formed from the electron transporting layer 174and the hole transporting layer 170, the present invention is notlimited to this example. The organic layer 300 may also be formed from aplurality of layers such as a hole injection layer, a hole transportlayer, an electron injection layer and an electron transport layer. Inthe case where the organic layer 300 is formed from a plurality oflayers, the resistance value Rn of the high resistance region 350 isexpressed by the following formula (2) where the number of layers is n,the thickness of each layer is Hn and the resistance ratio of each layeris rn.

$\begin{matrix}{{Rn} = {\sum\limits_{i = 1}^{n}{{rn} \times \frac{Hn}{S}}}} & (2)\end{matrix}$

FIG. 6 is a schematic planar diagram of a circuit structure of a displaydevice 100 according to one embodiment of the present invention. Thedisplay device 100 includes at least a display region 102, an imagesignal line 409, a scanning signal line 410, a drive power supply line428, a scanning line driving circuit 126, an IC chip 124 and a terminalregion 414. Furthermore, the display region 102 includes a plurality ofpixels 120.

The scanning line driving circuit 126 and the IC chip 124 drive thepixel circuits 430 arranged in each of the plurality of pixels 120 tocontrol the light emitted by the plurality of pixels 120.

The scanning line driving circuit 126 is connected to a plurality ofscanning signal lines 410. The plurality of scanning signal lines 410are arranged for each line (row) in a horizontal direction of theplurality of pixels 120. The scanning line driving circuit 126sequentially selects a plurality of scanning signal lines 410 accordingto a timing signal and a power supply input from a plurality of thirdterminals 122.

The IC chip 124 is connected to a plurality of image signal lines 409.The plurality of image signal lines 409 are arranged for each line(column) in a vertical direction of the plurality of pixels 120. The ICchip 124 is input with an image signal from a plurality of thirdterminals 122. In addition, together with the selection of a scanningsignal line 410 by the scanning line driving circuit 126, a voltagecorresponding to an image signal of a selected pixel is written to eachpixel 120 via each of the plurality of image signal lines 409. Inaddition, the IC chip 124 supplies a current supplied from the pluralityof third terminals 122 to each drive power supply line 428. In this way,pixels 120 in a selected row emit light.

The plurality of pixels 120 are arranged in a row direction and a columndirection. The number of pixels 120 which is arranged is arbitrary. Forexample, m pixels 120 are arranged in the row direction (X direction)and n pixels 120 are arranged in the column direction (Y direction) (mand n are integers). In the display area 102, the plurality of scanningsignal lines 410 are arranged in the row direction, and the plurality ofimage signal lines 409 are arranged in the column direction.

FIG. 7 shows a circuit diagram of a pixel circuit 430 of a pixel 120included in a display device according to one embodiment of the presentinvention. Furthermore, the circuit structure of the pixel circuit 430explained herein is an example. The circuit structure of the pixelcircuit 430 is not limited to the structure explained herein.

Each of the plurality of pixel circuits 430 includes at least a drivetransistor 434, a selection transistor 432, a light emitting element 436and a storage capacitor 438.

The drive transistor 434 is a transistor which is connected to the lightemitting element 436 and controls luminance of the light emitted by thelight emitting element 436. In the drive transistor 434, the draincurrent is controlled by a gate/source voltage. The gate of the drivetransistor 434 is connected to the drain of the selection transistor432, the source is connected to a drive power supply line 428, and thedrain is connected to the anode of the light emitting element 436.

The selection transistor 432 is a transistor that controls theconduction state between an image signal line 409 and the gate of thedrive transistor 434 by an on and off operation. The gate of theselection transistor 432 is connected to a scanning signal line 410, thesource is connected to an image signal line 409, and the drain isconnected to the gate of the drive transistor 434.

The light emitting element 436 includes an anode connected to the drainof the drive transistor 434 and a cathode connected to a reference powersupply line 426.

The storage capacitor 438 is connected between the gate and drain of thedrive transistor 434. The storage capacitor 438 holds a gate/drainvoltage of the drive transistor 434.

Here, as is described in FIG. 7, the reference power supply line 426 isarranged in common to a plurality of pixels 120. A constant potential isapplied to the reference power line from a plurality of third terminals122.

FIG. 8 is a schematic diagram showing pixels and wirings of a displaydevice according to one embodiment of the present invention. An examplein which the pixel 120 has a stripe structure was shown in FIG. 1. Inaddition, an example in which one pixel 120 is formed by threesubpixels, namely subpixel 130, subpixel 132 and subpixel 134 was shownin FIG. 1. However, the structure of the pixel is not limited to thestructure shown in FIG. 1. For example, as is shown in FIG. 8, twosubpixels having corresponding different colors may be included in onepixel 120. For example, one pixel 120 may include a subpixel 130corresponding to red and a subpixel 132 corresponding to green, and apixel 120 adjacent thereto may have a subpixel 134 corresponding to blueand a subpixel 132 corresponding to green. In this case, the reproducedcolor region will be different between adjacent pixels 120.

In addition, as is shown in FIG. 9, the wiring 207 does not have to bearranged in the case when corresponding colors are the same in adjacentsubpixels. This is because in the case where the corresponding colorsare the same in adjacent subpixels, electric color mixing does notsubstantially become a problem. Even if a certain subpixel emits lightand an adjacent subpixel of the same color slightly emits light due toelectric color mixing, since the light which is emitted is the samecolor, the emitted light is weak and the parts which emit light areclose to each other, it is difficult for a human eye to recognize. Inthe case where the corresponding colors are different between adjacentsubpixels, since undesirable light of different colors is emitted atadjacent places. Since the undesirable light emission is recognized as adifference in chromaticity by the human eye, electric color mixingbecomes a problem. Therefore, the wiring 207 according to one embodimentof the present invention is arranged. Furthermore, as is shown in FIG.10, in the case when corresponding colors are the same in adjacentsubpixels, the wiring 207 which is arranged does not have to beelectrically connected. By arranging a region where the wiring 207 isnot arranged or a region where the wiring 207 is not electricallyconnected, it is possible to reduce the sections where the resistancebecomes high or deteriorates by a potential difference of voltagesapplied to each wiring 207 and the second electrode layer 166. That is,since it is possible to suppress heat generation at the time of highresistance or a deterioration treatment, deterioration of the lightemitting element can be prevented.

In addition, the area of the subpixels within each pixel 120 may not bethe same. For example, as is shown in FIG. 11, one subpixel may have anarea different from the other two subpixels. In this case, for example,the area of the subpixel 132 which provides a green color is formed tobe the same as the area of the subpixel 130 which provides a red color,and the area of the subpixel 134 which provides a blue color may beformed so as to be larger than the area of the subpixel 132 whichprovides the green color or the area of the subpixel which provides thered color 130. Furthermore, as is shown in FIG. 11, even if one subpixelhas an area different from the other two subpixels, the wiring 207 canbe arranged between adjacent subpixels.

In addition, as is shown in FIG. 12, even if one subpixel has an areadifferent from the other two subpixels, in the case where correspondingcolors are the same in adjacent subpixels, the wiring 207 does not haveto be arranged. Furthermore, as is shown in FIG. 13, even if onesubpixel has an area different from the other two subpixels, in the casewhere the corresponding colors are the same in adjacent subpixels, thewiring 207 which is arranged does not have to be electrically connected.By arranging a region where the wiring 207 is not arranged or a regionwhere the wiring 207 is not electrically connected, it is possible toreduce the sections where become high resistance or deteriorated. Thatis, since it is possible to suppress heat generation at the time of highresistance or a deterioration treatment, deterioration of a lightemitting element can be prevented.

Furthermore, as is shown in FIG. 14, the arrangement of the pixels 120may be a so-called diamond pentile arrangement. In a diamond pentilearrangement, one pixel 120 includes two subpixels 130 for providing redcolor, two subpixels 134 for providing blue color and includes foursubpixels 132 for providing green color. Also, in the diamond pentilearrangement, it is possible to arrange the wiring 207 between adjacentsubpixels.

By adopting the structure described above, it is possible to eliminate alateral leakage current in the display device. Therefore, even when thedisplay device displays an image, it is possible to prevent adjacentpixels from emitting light. In addition, the display device can providea clear display without reducing color purity of the image which isdisplayed. Furthermore, by adopting the structure described above, sinceit is possible to eliminate a leakage current, it is possible to providea low power display device with reduced current consumption. Inaddition, by adopting the structure described above, it is possible toprovide a display device that can achieve both high definition and lowpower consumption.

<Second Embodiment>

In the present embodiment, a structure is explained in which a regionwhere a plurality of wirings are arranged is divided into two regions ina display region included in a display device according to oneembodiment of the present invention. Furthermore, explanations withrespect to the same structure as in the first embodiment may be omitted.

FIG. 15 is a schematic planar diagram showing a structure in which aregion where the wiring 207 is arranged is divided into two regions inthe display region 102 of the display device 200 according to oneembodiment of the present invention.

The display device 200 has a region A electrically connected to thewiring 207 and extending in a second direction which intersects a firstdirection in which the wiring 207 extends, and a similar region B. Theregion A and the region B are independent from each other and are notelectrically connected by the wiring 207. In each of the regions, thewiring 207 is formed between any one of the light emitting layer 176R,the light emitting layer 176G, or the light emitting layer 176B includedin a subpixel, and any one of the light emitting layer 176R, the lightemitting layer 176G, or the light emitting layer 176B included in anadjacent subpixel. In addition, the wiring 207 included in the region Ais electrically connected to the first wiring 206 extending from outsideof the display region 102. The first wiring 206 extends through theoutside of the display region 102 and is electrically connected to thefirst terminal wiring 210 via the contact hole 208. The first terminalwiring 210 is exposed in the vicinity of the end part of the displaydevice 100 and forms the first terminal 212. The first terminal 212 isconnected to the connector 214. The voltage applied to the wiring 207 ofthe region A is provided from an external circuit (not shown in thedrawing) via the first terminal 212 to the wiring 207 of the region A.

Similarly, the wiring 207 included in the region B is electricallyconnected to a second wiring 206B which extends from the outside of thedisplay region 102. The second wiring 206B extends through the outsideof the display region 102 and is electrically connected to the secondterminal wiring 210B via a contact hole 208B. The second terminal wiring210B is exposed in the vicinity of the end part of the display device100 to form the second terminal 212B. The second terminal 212B isconnected to the connector 214. The voltage applied to the wiring 207included in the region B is provided to the wiring 207 included in theregion B from an external circuit (not shown in the drawing) via thesecond terminal 212B. Furthermore, application of the voltage isperformed twice in total in each of the region A and the region B.

Similarly, the second electrode layer 166 is electrically connected tothe second wiring 216 which extends from outside of the display region102. The second wiring 216 extends through the outside of the displayregion 102 and is electrically connected to the second terminal wiring220 via the contact hole 218. The second terminal wiring 220 is exposedin the vicinity of the end part of the display device 100 to form thesecond terminal 222. The second terminal 222 is connected to theconnector 214. The voltage applied to the second electrode layer 166 isprovided from an external circuit to the second electrode layer 166 viathe second terminal 222. The second electrode layer 166 is common to theregion A and the region B. Even when there are two regions, it ispossible to suppress variations in a potential difference between thewiring 207 of the region A and the wiring 207 of the region B and thesecond electrode layer 166 by sharing the second electrode layer 166.

Furthermore, a voltage may be supplied to the wiring 207 included in theregion A and the wiring 207 included in the region B to increase theresistance value between the wiring 207 included in each region and thesecond electrode layer 166 and then the first terminal wiring 210 may bedisconnected. In this way, even if an unexpected excess current orexcess voltage is supplied to the first terminal 212 of the displaydevice 200, it is possible to prevent breakage and display defects inthe display device 200.

By adopting this this type of structure, in the display device accordingto one embodiment of the present invention, it is possible to divide aregion and increase the resistance value between the wiring 207 of eachregion and the second electrode layer 166. Therefore, it is possible toreduce the possibility of breakage of the display device compared withthe case where the resistance value is increased by applying a voltageto the entire region of the display device at once. More specifically,since the organic layer 300 and the light emitting layer 176 are weakwith respect to heat, it is possible to reduce the risk of breakage ofthese layers due to heat generation which accompanies a single voltageapplication. In addition, by dividing the region, it is possible toreduce the power consumed by applying a single voltage.

FIG. 16 shows an example in which a selection circuit 360 is added tothe structure of FIG. 15.

FIG. 16 shows an example in which wiring supplies a voltage to thewiring 207 included in the region A and in the region B is set to onewiring system (VIN). The supply of voltage to the wiring 207 of theregion A and the wiring 207 of the region B is distributed from aone-line system of wiring (VIN).

More specifically, one-line system of wiring (VIN), a selection signal 1(IN1), and a selection signal 2 (IN2) are input to the selection circuit360. In addition, OUT1 for supplying a voltage to the wiring 207 of theregion A and OUT2 for supplying a voltage to the wiring 207 included inthe region B are output from the selection circuit 360. The selectioncircuit 360 has, for example, a switch 1 electrically connected to OUT1and a switch 2 connected to OUT2, and may be formed so that a voltage issupplied to either one of OUT1 or OUT2 by at least one of the selectionsignal 1 and the selection signal 2. In addition, the selection circuit360 may be formed to supply a voltage to the wiring 207 included in theregion A or the wiring 207 included in the region B by a logic circuit.The logic circuit may include, for example, a NAND or an inverter andthe like. In addition, the logic circuit may include a demultiplexer orthe like.

Furthermore, as in the present embodiment, a case is explained in whichthe arrangement of the pixels 120 is a diamond pentile arrangement inthe structure in which the region where the wiring 207 is arranged isdivided into two sections. For example, as is shown in FIG. 17, thearranged wiring 207 can be arranged so as not to be electricallyconnected in a region in which subpixels having the same correspondingcolors are adjacent to each other. In the upper surface view shown inFIG. 17, the left side wiring 207 corresponds to the region A shown inFIG. 15 and FIG. 16, and the right side wiring 207 corresponds to theregion B shown in FIG. 15 and FIG. 16. By arranging a region where thewiring 207 is not electrically connected, it is possible to reduce thesections where the resistance becomes high or deteriorates by apotential difference of voltages applied to each wiring 207 and thesecond electrode layer 166. That is, since it is possible to suppressheat generation at the time of high resistance or a deteriorationtreatment, deterioration of a light emitting element can be prevented.

By adopting such a structure, in the display device according to oneembodiment of the present invention, it is possible to divide a regionand increase the resistance value between the wiring 207 of each regionand the second electrode layer 166. Therefore, it is possible to reducethe possibility of breakage of the display device compared with the casewhere the resistance value is increased by applying a voltage to all theregions at one time. More specifically, since the organic layer 300 andthe light emitting layer 176 are weak with respect to heat, it ispossible to reduce the risk of breakage of these layers due to heatgeneration which accompanies a single voltage application. In addition,by dividing a region, it is possible to reduce the power consumed byapplying a single voltage. Furthermore, since the first terminal and thedisplay area are not directly connected by the selection circuit, evenif an unexpected excess current or excess voltage is supplied, it ispossible to prevent breakage of the display device and display defects.

<Third Embodiment>

In the present embodiment, a method of manufacturing the display device100 described in the first embodiment is explained while referring toFIG. 18 and FIG. 19 to FIG. 23. FIG. 19 to FIG. 23 correspond to thecross section shown in FIG. 18. An explanation of the same contents asdescribed in the first embodiment and the second embodiment may beomitted.

First, as is shown in FIG. 18, an underlayer film 106 is formed on asubstrate 104. The substrate 104 has a function for supporting asemiconductor element such as the transistor 140 included in the displayregion 102 and the light emitting layer 176 and the like. The materialused for the substrate 104 can include, for example, glass, quartz,plastic, metal or ceramic and the like.

In the case where flexibility is provided to the display device 100, thesubstrate 104 may be given flexibility. Furthermore, a support substratemay be arranged under the substrate. The support substrate is formed of,for example, a hard inorganic material, glass, quartz, metal or aceramic. In the case where the substrate 104 is flexible, the materialused for the substrate 104 may include a polymer material exemplified bypolyimide, polyamide, polyester, or polycarbonate. For example, thesubstrate 104 can be formed by applying a wet film forming method suchas a printing method, an ink jet method, a spin coating method, a dipcoating method or a lamination method and the like. In the case wherethe substrate 104 has flexibility, the display device 100 havingflexibility can be obtained by peeling the substrate 104 from thesupport substrate after manufacturing the display device 100.

The underlayer film 106 is a film having a function of preventingimpurities such as alkali metal from diffusing from the substrate 104(and the support substrate) to the transistor 140 and the like. Thematerial used for the underlayer film 106 may include an inorganicinsulator such as silicon nitride, silicon oxide, silicon nitride oxideor silicon oxynitride. The underlayer film 106 can be formed to have asingle layer or a stacked structure by applying chemical vapordeposition (CVD) or sputtering and the like.

Next, a semiconductor film 142 is formed (FIG. 19A). The semiconductorfilm 142 may include, for example, silicon or the like. Alternatively,the semiconductor film 142 may include an oxide semiconductor. Examplesof the oxide semiconductor include a mixed oxide (IGO) of indium andgallium, or a mixed oxide (IGZO) including indium, gallium, and zinc.The matter state of the semiconductor film 142 may include any of asingle crystal, polycrystalline, microcrystalline and amorphous.

The semiconductor film 142 can be formed using a CVD method or asputtering method and the like.

Next, a gate insulating film 144 is formed to cover the semiconductorfilm 142 (FIG. 19A). The gate insulating film 144 may have either asingle layer structure or a stacked layer structure. The gate insulatingfilm 144 can be formed by the same method as the underlayer film 106.

Next, a gate electrode 146 is formed over the gate insulating film 144.The gate insulating film 144 is formed by a sputtering method or a CVDmethod and the like (FIG. 19B). The gate electrode 146 can be formedusing a metal such as titanium, aluminum, copper, molybdenum, tungstenor tantalum and the like or an alloy thereof so as to have a singlelayer or a stacked layer structure.

Next, an interlayer film 108 is formed over the gate electrode 146 (FIG.20A). The interlayer film 108 may have either a single layer structureor a stacked layer structure. The interlayer film 108 can be formed bythe same method as the underlayer film 106. In the case where theinterlayer film 108 has a stacked structure, for example, a layercontaining an organic compound may be formed and then a layer containingan inorganic compound may be stacked.

Next, the interlayer film 108 and the gate insulating film 144 areetched to form an opening which reaches the semiconductor film 142. Theopening can be formed by performing plasma etching in a gas containing afluorine-containing hydrocarbon, for example.

Next, a metal film is formed to cover the opening, and etching isperformed to form source or drain electrodes 148. In the presentembodiment, the first terminal wiring 210 is formed at the same time asthe formation of the source or drain electrodes 148 (FIG. 20B).Therefore, it is possible for the source or drain electrodes 148 and thefirst terminal wiring 210 to exist in the same layer. Here, the metalfilm can have a structure similar to the gate electrode 146. Inaddition, the metal film can be formed using the same method as theformation of the gate electrode 146.

Next, a planarization film 114 is formed to cover the source or drainelectrodes 148 and the first terminal wiring 210 (FIG. 21A). Theplanarization film 114 has a function for absorbing unevenness andinclinations caused by the transistor 140 and the first terminal wiring210 and the like, and to provide a flat surface. The planarization film114 can be formed using an organic insulator. Examples of the organicinsulator include polymer materials such as epoxy resin, acrylic resin,polyimide, polyamide, polyester, polycarbonate or polysiloxane. Theplanarization film 114 can be formed by the wet film formation methoddescribed above.

Next, an inorganic insulating film 150 is formed on the planarizationfilm 114 (FIG. 21A). As described above, the inorganic insulating film150 functions as a protective film for the transistor 140. In addition,the inorganic insulating film 150 may form a capacitor (not shown in thedrawing) together with the first electrode 162 of the light emittingelement 160 formed later. Therefore, it is preferred to use a materialhaving a relatively high dielectric constant as a material for formingthe inorganic insulating film 150. For example, silicon nitride, siliconnitride oxide and silicon oxynitride or the like can be used for theinorganic insulating film 150. In addition, the inorganic insulatingfilm 150 can be formed by applying a CVD method or a sputtering method.

Next, as is shown in FIG. 21B, an opening 154, a contact hole 152 and acontact hole 208 are formed. Following this, a first electrode 162, aconnection electrode 234 and a connection electrode 236 are formed tocover the opening 154, the contact hole 152 and the contact hole 208(FIG. 22A).

Here, a region where the connection electrode 236 is formed becomes aregion to which the connector 214 such as an FPC or the like isconnected later via an anisotropic conductive film or the like. Theregion where the connection electrode 236 is formed is larger in areathan the region where the connection electrode 234 is formed.

Furthermore, the region where the connection electrode 236 is formedincludes the opening 154. In addition, the region where the connectionelectrode 234 is formed includes the contact hole 208. For example, theregion where the connection electrode 236 is formed has a width of 10 μmor more and 50 μm or less and a length of 1 mm or more and 2 mm or less.The region where the connection electrode 234 is formed has, forexample, a width of several μm or more and several tens of μm or lessand a length of several μm or more and several tens of μm or less. Theopening 154 may be a minimum size as long as it is a size which allowsthe first terminal wiring 210, the connection electrode 234 and thefirst wiring 206 to be connected with a sufficiently low contactresistance.

For example, the first electrode 162 is formed using a metal having ahigh reflectance such as silver or aluminum or an alloy thereof. In thefirst electrode 162, a light transmitting conductive oxide film may beformed over a film including these metals or alloys. Examples of theconductive oxide include ITO and IZO and the like. In addition, thefirst electrode 162 may be formed using ITO or IZO.

In the present embodiment, the first electrode 162, the connectionelectrode 234 and the connection electrode 236 are formed on theinorganic insulating film 150. The connection electrode 234 and theconnection electrode 236 may exist in the same layer as the firstelectrode 162. Therefore, for example, the metal film described above isformed to cover the opening 154, the contact hole 152 and the contacthole 208, and then it is possible to form a film containing a conductiveoxide, and form the first electrode 162, the connection electrode 234and the connection electrode 236. In addition, the conductive oxidefilm, the metal film described above, and the conductive oxide film aresequentially stacked to cover the opening 154, the contact hole 152 andthe contact hole 208, and the first electrode 162, the connectionelectrode 234 and the connection electrode 236 may be formed. Inaddition, a conductive oxide is formed to cover the opening 154, thecontact hole 152 and the contact hole 208 and following this, a stackedfilm of a conductive oxide film, the metal film described above, and aconductive film may be formed to selectively cover the contact hole 152.When the first electrode 162 covers the contact hole 152 and iselectrically connected to the source or drain electrodes 148, a currentis supplied to the light emitting element 160 via the transistor 140.

Next, a partition wall 168 is formed to cover an end part of the firstelectrode 162 (FIG. 22B). The partition wall 168 can absorb steps causedby the first electrode 162 and the like and electrically insulates thefirst electrodes 162 of adjacent subpixels from each other. Thepartition wall 168 can be formed by a wet film formation method using,for example, an epoxy resin or an acrylic resin and the like.

Next, wiring 207 is formed. In the present embodiment, the first wiring206 is formed at the same time with the formation of the wiring 207(FIG. 22B). Therefore, the wiring 207 and the first wiring 206 can existin the same layer. It is preferred that the wiring 207 and the firstwiring 206 are metal films. The wiring 207 and the first wiring 206 canhave a similar structure to that of the gate electrode 146. In addition,the wiring 207 and the first wiring 206 can be formed using the samemethod as the formation of the gate electrode 146.

Next, the light emitting element 160 is formed over the planarizationfilm 114 and the inorganic insulating film 150. The light emittingelement 160 is formed by a first electrode (pixel electrode) 162, afunctional layer 164 and a second electrode (opposing electrode) layer166. The second electrode layer 166 may extend continuously over theentire display area. The functional layer 164 is formed to cover thefirst electrode 162, the partition wall 168 and the wiring 207. Inaddition, the second electrode layer 166 is formed above the functionallayer 164 (FIG. 22B). Carriers are injected into the functional layer164 from the first electrode 162 and the second electrode layer 166, andcarrier recombination occurs in the functional layer 164. In this way,the light emitting molecules in the functional layer 164 are brought toan excited state, and light emission is obtained through a process ofrelaxation to a ground state. Therefore, a region where the firstelectrode 162 and the functional layer 164 are in contact is a lightemitting region in the subpixel 130, the subpixel 132 and the subpixel134. Furthermore, the functional layer 164 includes the organic layer300.

It is possible to appropriately select the structure of the functionallayer 164. For example, the functional layer 164 can be formed bycombining a carrier injection layer, a carrier transport layer, a lightemitting layer, a carrier blocking layer and an exciton blocking layerand the like. In FIG. 18, an example is shown in which the functionallayer 164 has a layer 170, a layer 176 and a layer 174. In this case,for example, the layer 170 may be a carrier (hole) injection and/ortransport layer, the layer 176 may be a light emitting layer and thelayer 174 may be a carrier (electron) injection and/or transport layer.The carrier (hole) injection and/or transport layer and the carrier(electron) injection and/or transport layer may spread continuouslythroughout the entire display region. Furthermore, the functional layer164 can be formed by applying a wet film formation method such as aninkjet method or a spin coating method, or a dry film formation methodsuch as a vapor deposition method.

In addition, the functional layer 164 may include a first unit includinga first carrier (hole) injection and/or transport layer, a lightemitting layer 176B which emits blue light, a first carrier (electron)injection and/or transport layer, and a second unit including a secondcarrier (hole) injection and/or transport layer, a light emitting layerwhich emits red and green light and a second carrier (electron)injection and/or transport layer and the like. In addition, thefunctional layer 164 may have a so-called tandem structure in which thefirst unit, an intermediate layer, and the second unit are stacked. Whenthe functional layer 164 has a tandem structure, it is possible toobtain light emission of each color from each unit regardless of onedisplay element, and therefore it is possible to provide a displayelement with high efficiency.

In addition, as is shown in FIG. 18, the layer 176 which is a lightemitting layer can be formed to include different materials in thesubpixel 130, the subpixel 132 and the subpixel 134. Specifically, thesubpixel 130 may include a light emitting layer 176R corresponding tored, the subpixel 132 may include a light emitting layer 176Gcorresponding to green and the subpixel 134 may include a light emittinglayer 176B corresponding to blue. In this case, it is preferred that thelayer 170 and the layer 174 are formed so as to be shared by thesubpixel 130, the subpixel 132 and the subpixel 134. That is, the layer170 and the layer 174 may be formed over the subpixel 130, the subpixel132, the subpixel 134 and the partition wall 168. By appropriatelyselecting the material used for the layer 176, it is possible to obtainlight emission of different colors in the subpixel 130, the subpixel 132and the subpixel 134. In addition, the structure of the layer 174 may bethe same between the subpixel 130, the subpixel 132 and the subpixel134.

In this case, the layer 174 may also be formed over the subpixel 130,the subpixel 132, the subpixel 134 and the partition wall 168 so as tobe shared by the subpixel 130, the subpixel 132 and the subpixel 134. Insuch a structure, it is possible to obtain light emission of the samecolor from the subpixel 130, the subpixel 132, and the layer 176 of thesubpixel 134. Therefore, for example, the layer 176 may be formed toemit white light, and various colors (for example, red, green, and blue)may be extracted from the subpixel 130, the subpixel 132 and thesubpixel 134 by using color filters.

In the case when the light emitted from the light emitting element 160is extracted from the first electrode 162, a metal such as aluminum,magnesium, silver or an alloy thereof may be used for the secondelectrode layer 166. In the case when the light emitted from the lightemitting element 160 is extracted from the second electrode layer 166, alight transmitting conductive oxide such as ITO may be used for thesecond electrode layer 166. The metals described above can be formed toa thickness that allows visible light to pass through. A thickness whichallows visible light to pass through is, for example, 5 nm or more and20 nm or less. In this case, a light transmitting conductive oxide maybe further stacked.

Next, a sealing film 180 is formed. First, as is shown in FIG. 23, afirst inorganic film 182 is formed to cover the light emitting element160, the connection electrode 234 and the connection electrode 236. Thefirst inorganic film 182 can include an inorganic material such as, forexample, silicon nitride, silicon oxide, silicon nitride oxide orsilicon oxynitride. In addition, the first inorganic film 182 can beformed using the same method as the underlayer film 106.

Next, an organic film 184 is formed (FIG. 23). The organic film 184 maycontain an organic resin including acrylic resin, polysiloxane,polyimide or polyester and the like. In addition, as is shown in FIG.23, the organic film 184 may be formed to absorb irregularities causedby the partition wall 168 and the organic film 184 may be formed to athickness so that a flat surface is provided. The organic film 184 ispreferred to be formed selectively within the display region 102. Thatis, it is preferred that the organic film 184 be formed so as not tooverlap with the connection electrode 234 and the connection electrode236. The organic film 184 can be formed by a wet film formation methodsuch as an inkjet method. Alternatively, the organic film 184 may beformed by forming an oligomer which is a raw material of the polymermaterial, in a mist state or a gaseous state under reduced pressure,blowing it onto the first inorganic film 182 and then polymerizing theoligomer.

Following this, a second inorganic film 186 is formed (FIG. 23). Thesecond inorganic film 186 has a similar structure similar to the firstinorganic film 182. In addition, the second inorganic film 186 can beformed by the same method as the first inorganic film 182. The secondinorganic film 186 can also be formed so as to cover not only theorganic film 184 but also the connection electrode 234 and theconnection electrode 236. As a result, the organic film 184 can besealed by the first inorganic film 182 and the second inorganic film186.

Next, an organic insulating film 190 is formed (FIG. 18). The organicinsulating film 190 may include the same material as the organic film184. In addition, the organic insulating film 190 can be formed by thesame method as the organic film 184. As is shown in FIG. 23, it ispreferred that the organic insulating film 190 selectively covers aregion where the first inorganic film 182 and the second inorganic film186 are in contact with each other in the display region 102.Furthermore, as is shown in FIG. 23, the organic insulating film 190 ispreferred to be formed so as not to overlap with the connectionelectrode 234 and the connection electrode 236. Next, using the organicinsulating film 190 as a mask, the first inorganic film 182 and thesecond inorganic film 186 exposed from the organic insulating film 190are removed by etching.

In this way, the connection electrode 234 is exposed in the contact hole208 arranged outside the display region 102. In addition, the connectionelectrode 236 is exposed in the opening 154 arranged outside the displayregion 102. At this time, a part of the inorganic insulating film 150 isalso etched, and the thickness of the inorganic insulating film 150sometimes becomes thin. Furthermore, the organic insulating film 190 maybe a substance with adhesive properties formed from an organic material.

Following this, a cover film 268 is formed. Next, the display device 100shown in FIG. 18 can be formed by electrically connecting the connector214 and the opening 154 using the anisotropic conductive film 252 andthe like. The organic insulating film 190 may include a polymer materialsuch as polyester, epoxy resin or acrylic resin. In addition, theorganic insulating film 190 can be formed by applying a printing methodor a lamination method and the like. The cover film 268 can be formedfrom a polymer material similar to the organic insulating film 190 or apolymer material such as polyolefin or polyimide.

Although not shown in the drawing, in the case when the display device100 is provided with flexibility, for example, after arranging theconnector 214, light such as a laser may be irradiated from the side ofthe substrate 104. By irradiating light such as laser from the side ofthe substrate 104, it is possible to reduce the adhesive force betweenthe substrate 104 and the support substrate. Following this, by peelingthe substrate 104 from the support substrate using physical force, it ispossible to provide the display device 100 with flexibility. Inaddition, in the case where flexibility is provided to the displaydevice 100, after forming the organic insulating film 190, light such asa laser may be irradiated from the substrate 104 side.

Furthermore, the present embodiment may be freely combined with otherembodiments described in the present invention.

As is described in the present embodiment, the wiring is arranged abovethe partition wall and the second electrode layer is further formedabove the wiring. Since the display device manufactured as describedabove can eliminate a lateral leakage current, it is possible to providea clear display without reducing the color purity of the image to bedisplayed. Furthermore, by adopting the structure described above, it ispossible to provide a low power display device. In addition, by adoptingthe structure described above, it is possible to provide a displaydevice which can achieve both high definition and low power consumption.

Each embodiment described above as embodiments of the present inventioncan be implemented in combination as appropriate as long as they do notcontradict each other. In addition, those skilled in the art couldappropriately add, delete or change the design of the constituentelements based on the display device of each embodiment, or add, omit orchange conditions as long as it does not depart from the concept of thepresent invention and such changes are included within the scope of thepresent invention.

Although an EL display device is exemplified in the presentspecification, other self-light emitting type display devices can begiven as another application example. In addition, the size of thedisplay device exemplified in the present specification can be appliedfrom a medium to small size to a large size without any particularlimitation.

Even if other actions and effects different from the actions and effectsbrought about by the aspects of each embodiment described above areobvious from the description of the present specification or those whichcould be easily predicted by those skilled in the art, such actions andeffects are to be interpreted as being provided by the presentinvention.

What is claimed is:
 1. A display device comprising: a first electrodelayer including a plurality of first electrodes arranged in a firstdirection and a second direction intersecting the first direction; asecond electrode layer; an organic layer including a plurality of lightemitting layers; a wiring layer including a plurality of wiringsextending in the first direction and the second direction; and a barrierwall covering edges of the plurality of first electrodes; wherein theplurality of wirings is in contact with a top of the barrier wall, eachof the plurality of light emitting layers is between one of theplurality of first electrodes and the second electrode layer, theorganic layer is between each of the plurality of wirings and the secondelectrode layer, one of the plurality of wirings is between two adjacentfirst electrodes of the plurality of first electrodes in a planar view,another one of the plurality of wirings is between another two adjacentfirst electrodes of the plurality of first electrodes in the planarview, the one of the plurality of wirings, the another one of theplurality of wirings, the one of the plurality of first electrodes, andthe second electrode layer are configured so that a first voltage to beapplied between the one of the plurality of wirings and the secondelectrode layer and a second voltage to be applied between the anotherone of the plurality of wirings and the second electrode layer are bothhigher than a third voltage to be applied between the one of theplurality of first electrodes and the second electrode layer, the one ofthe plurality of wirings and the another one of the plurality of wiringsare separated from each other, and the one of the plurality of wiringsand the another one of the plurality of wirings are connected to aselection circuit configured to apply the first voltage and the secondvoltage at different periods from each other.
 2. The display deviceaccording to claim 1, wherein the organic layer and the second electrodeare continuously spread respectively.
 3. The display device according toclaim 1, wherein the organic layer includes an electron transport layerand a hole transport layer.
 4. The display device according to claim 1,wherein the organic layer between the one of the plurality of wiringsand the second electrode is deteriorated.
 5. The display deviceaccording to claim 1, wherein a resistance value between the one of theplurality of wirings and the second electrode is higher than aresistance value between the one of the plurality of first electrodesand the second electrode.